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Theory of intraband transition linewidths due to LO phonon scattering in triangular well based on the many body projection method |
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| Authors: | N. L. Kang H. M. Lee S. C. Lee S. D. Choi |
| Affiliation: | (1) Department of Nano Medical Engineering, Pusan National University, Miryang, 627-706, Republic of Korea;(2) Research Institute for Basic Science and Department of Physics, Cheju National University, Jeju, 690-756, Korea;(3) Department of Physics, Kyungpook National University, Daegu, 702-701, Republic of Korea |
| Abstract: | Utilizing the state dependent projection technique, we derive a formula for intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in a triangular potential well. We find for GaN that the absorption power is keenly affected by the screening in such a way that the power increases with the electron density. We also find that the linewidth increases with the temperature, but decreases with the electric field applied to the system. |
| Keywords: | PACS. 71.38.-k Polarons and electron-phonon interactions 72.10.-d Theory of electronic transport scattering mechanisms 73.21.Fg Quantum wells |
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