基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论，建立了MOSFET辐照前1/f噪声参量与辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移之间的定量数学模型，并通过实验予以验证.研究结果表明，辐照诱生的氧化层陷阱通过俘获和发射过程与沟道交换载流子，在引起载流子数涨落的同时也通过库仑散射导致沟道迁移率的涨落，因此辐照前的1/f噪声幅值正比于辐照诱生的氧化层陷阱数.利用该模型对MOSFET辐照前1/f噪声与辐照退化的相关性从理论上 关键词： f噪声')" href="#">1/f噪声 辐照 金属-氧化物-半导体场效应晶体管 陷阱

Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation， a quantitative mathematic model between pre-irradiation 1/f noise parameters and post-irradiation threshold voltage drift due to oxide traps and interface traps is established. It agrees well with the experimental results. This model shows that 1/f noise in MOSFET is priginates from the random trapping/detrapping processes between oxide traps and the channel， which causes fluctuations in both the number and the mobility of channel carriers. So pre-irradiation 1/f noise magnitude is directly proportional to post-irradiation oxide-trap charge. The results not only explain the correlation between MOSFET pre-irradiation 1/f noise power spectral density and radiation degradation in theory， but also provide the theory for forecasting MOSFET radiation-resistant capability.