Synthesis and optical properties of In-doped GaN nanocrystals |
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| Authors: | S.V. Bhat |
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| Affiliation: | Chemistry and Physics of Materials Unit, DST Nanoscience Unit and CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064, India |
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| Abstract: | Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content. |
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| Keywords: | 73.61.Tm 78.55.Cr |
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