Field-ion microscopy of GaAs and GaP

Clean surfaces of GaAs and GaP were studied by field-ion microscope (FIM). Field-ion images with ordered surfaces were first obtained in pure hydrogen, neon-50% hydrogen and pure neon gases at 78 K, by using channeltron electron multiplier arrays (CEMA). The field-ion images of GaAs were quite similar to those of GaP with respect to the surface structure and the image contrast. They showed the anisotropies of the ion emission and the surface structure between the 111] and $\text{1}\text{1}\text{1}\text{]}$ orientations. Ring steps expected from a spherical surface were observed on the (111) and {100} planes, but not on the $\text{1}\text{1}\text{1}\text{]}$ and {110} planes. The regional brightness of the FIM patterns was discussed in terms of the Knor and Müller model and the atomic and electronic structures of the surface. The image field of these crystals was much lower than that of metals usually used in FIM. For example, the image field strength for the hydrogen and GaAs system was about 1.1 V/Å. The reduction of the field necessary to image was also discussed in terms of the field penetration effect.