Subnanometre depth resolution in sputter depth profiling of Si layers using grazing‐incident low‐energy O2+ and Ar+ ions

The sputter damage profiles of Si(100) by low‐energy O₂⁺ and Ar⁺ ion bombardment at various angles of incidence were measured using medium‐energy ion scattering spectroscopy. It was observed that the damaged Si surface layer can be minimized down to 0.5–0.6 nm with grazing‐incident 500 eV Ar⁺ and O₂⁺ ions at 80°. To illustrate how the damaged layer thickness can be decreased down to 0.5 nm, molecular dynamics simulations were used. The SIMS depth resolution estimated with trailing‐edge decay length for a Ga delta‐layer in Si with grazing‐incident 650 eV O₂⁺ was 0.9 nm, which is in good agreement with the measured damaged layer thickness. Copyright © 2004 John Wiley & Sons, Ltd.