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Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer |
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| Authors: | M.L. Zhang X.L. Wang H.L. Xiao C.M. Wang C.B. Yang J. Tang C. Feng L.J. Jiang G.X. Hu J.X. Ran ZH.G. Wang |
| Affiliation: | 1. Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China |
| Abstract: | |
| Keywords: | AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance |
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