The effect of different substrate temperatures on the structure and luminescence properties of Y2O3:Bi3+ thin films |
| |
| Affiliation: | 1. Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300, South Africa;2. Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, 11115, Omdurman, Sudan;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xian Jiaotong University, Xian 710049, ShannXi, China;2. International Center for Dielectric Research, Xian Jiaotong University, Xian 710049, ShannXi, China;3. School of Materials Science and Engineer, Chang’an University, Xi’an 710061, ShannXi, China;1. Department of Physics, Shri Mata Vaishno Devi University, Katra, 182320, J&K, India;2. Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA9300, South Africa;1. Laboratory for Microstructures, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;2. Department of Mechanical Engineering, Tangshan Polytechnic College, Tangshan 063020, China;1. Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300, South Africa;2. Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016, India |
| |
| Abstract: | Y2O3:Bi3+ phosphor thin films were prepared by pulsed laser deposition in the presence of oxygen (O2) gas. The microstructure and photoluminescence (PL) of these films were found to be highly dependent on the substrate temperature. X-ray diffraction analysis showed that the Y2O3:Bi3+ films transformed from amorphous to cubic and monoclinic phases when the substrate temperature was increased up to 600 °C. At the higher substrate temperature of 600 °C, the cubic phase became dominant. The crystallinity of the thin films, therefore, increased with increasing substrate temperatures. Surface morphology results obtained by atomic force microscopy showed a decrease in the surface roughness with an increase in substrate temperature. The increase in the PL intensities was attributed to the crystallinity improvement and surface roughness decrease. The main PL emission peak position of the thin films prepared at substrate temperatures of 450 °C and 600 °C showed a shift to shorter wavelengths of 460 and 480 nm respectively, if compared to the main PL peak position of the powder at 495 nm. The shift was attributed to a different Bi3+ ion environment in the monoclinic and cubic phases. |
| |
| Keywords: | Substrate temperture Photoluminscence PLD thin films |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
