Investigation of photoelectrical properties and relaxation dynamics in photoexcited CdSe nanocrystals in thin film form

Electrical and photoelectrical properties of cubic CdSe nanocrystals in thin film form (including the relaxation dynamics of photocarriers) are investigated. Photoelectrical properties of the obtained films are controlled by chemical (varying the reagent concentration in the reaction system) and physical means (controlling the crystal dimensions). In the case of thin films with optimal photoelectrical properties, the calculated band gap energy and ionization energies of impurity levels (on the basis of experimentally obtained temperature dependence of dark electrical resistance) at 0 K are 1.85, 0.74 and 0.43 eV, correspondingly. The calculated optical band gap energy (on the basis of spectral dependence of photoconductivity) at room temperature of 1.75 eV is in excellent agreement with the value of 1.77 eV which is obtained on the basis of electronic absorption spectrum in the framework of parabolic approximation for dispersion relation. Upon thermal treatment of chemically deposited thin films of cubic CdSe quantum dots, as a result of processes of coalescence and crystal growth, the electronic contact between nanocrystals increases and the confinement effects irreversibly disappear. Relaxation of non-equilibrium charge carriers is practically carried out according to the linear mechanism. The calculated relaxation time of photoexcited charge carriers is 0.4 ms.