Electronic structure of amorphous Nb1-x
Si
x
films studied by X-ray emission and X-ray photoelectron spectroscopy |
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| Authors: | K Söldner A Grassmann G Saemann-Ischenko W Zahorowski A Šim⫲nek G Wiech |
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| Institution: | (1) Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-8520 Erlangen, Federal Republic of Germany;(2) Sektion Physik, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, D-8000 München 22, Federal Republic of Germany;(3) Present address: Siemens AG, UB KWU, Hammerbacher Strasse 12–14, D-8520 Erlangen, FRG;(4) Present address: Institute of Physics, Polish Academy of Sciences, PL-02668 Warsaw, Poland;(5) Present address: Institute of Physics, Czechoslovacian Academy of Sciences, CS-18040 Prague, CSSR |
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| Abstract: | We present valence band spectra of the amorphous system Nb1–x
Si
x
(0.2 x0.8), of bcc-Nb and of a-Si obtained by X-ray photoelectron spectroscopy (XPS, Al K ) and X-ray emission spectroscopy (XES, Si K-emission bands). The samples were prepared as thin films by sputtering. The origin of all prominent spectral features was identified and consistently correlated to Si 3s-, Si 3p-and Nb 4d-derived states. The Nb4d-Si3p coupling is stable in binding energy over a wide concentration range. There is strong experimental evidence that the short range order changes considerably within the concentration interval 0.4x0.7, whereas the partial density of states of the Si 3p-electrons is clearly altered in the small concentration range 0.50x0.57. |
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