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Room temperature photoluminescence mechanism of SiOx film after annealing at different temperatures |
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| Authors: | YC Fang ZJ Zhang |
| Institution: | a Vacuum Section of Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China b Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China c Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China d Department of Optical Science and Engineering, and the State Key Laboratory of Advanced Phontonic Materials and Devices, Fudan University, Shanghai 200433, People's Republic of China |
| Abstract: | SiOx films were deposited on Si(1 0 0) substrates by evaporation of SiO powder. The samples were annealed from room-temperature (RT) to 1100 °C. After the samples were cooled down to RT, photoluminescence (PL) spectra from these samples were measured. It was found that when the annealing temperature Ta is not higher than 1000 °C, there is a PL centered at 620 nm, and with Ta increasing the intensity increases at first and then decreases when Ta is higher than 500 °C. When Ta is no less than 1000 °C another PL peak located at 720 nm appears. Combined with Raman and XRD spectra, we confirm that the latter PL is from Si nanocrystals that start to form when Ta is higher than 1000 °C. PL spectra for Ta<900 °C were discussed in detail and was attributed to defects in the matrix rather than from Si clusters. |
| Keywords: | 78 55 &minus m 73 63 Bd 78 68 +m |
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