| 在正向电压激发下ZnSe MIS二极管的自由激子发光 |
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| 引用本文： | 范希武,J.Woods.在正向电压激发下ZnSe MIS二极管的自由激子发光[J].发光学报,1981,2(3):12-17. |
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| 作者姓名： | 范希武 J.Woods |
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| 作者单位： | 1. 中国科学院长春物理研究所;2. 英国Durham大学应用物理和电子学系 |
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| 摘 要： | 研究了最低温度为20~30K时,在正向电压激发下ZnSe MIS二极管的激子发光光谱,在这一温度下,二极管有可能通过足以产生发光的电流.对于利用通常气相技术生长的高纯晶体所制备的二极管,其电致发光几乎完全由Γ8→Γ6自由激子发光的1LO和2LO声子伴线所组成.根据Gross等人的半经典理论,讨论了两个谱带的形状.结果是谱带的宽度和不对称性归结为激子服从Maxwell-Boltzmann分布,其有效激子温度接近于晶格温度.
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FREE EXCITON EMISSION IN FORWARD-BIASED ZnSe MIS DIODES |
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| Fan Xi-wu,J. Woods.FREE EXCITON EMISSION IN FORWARD-BIASED ZnSe MIS DIODES[J].Chinese Journal of Luminescence,1981,2(3):12-17. |
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| Authors: | Fan Xi-wu J Woods |
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| Institution: | 1. Changchun Institute of physics Chinese Academy of Sciences;2. Department of Applied physics and Electornics, University of Durham |
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| Abstract: | The exciton emission spectrum of ZnSe MIS diodes in forward bias electroluminescence has been studied down to the lowest temperatures (20-30K) atwhich it is still possible to pass an appreciable current through a device. Withdiodes prepared on crystals of the highest chemical purity grown by conventional vapour phase techniques, the luminescence consisted almost entirely of the 1LO and 2LO phonon assisted replicas of the Γ3→Γ6 free exciton emission.The shapes of the two bands are discussed in terms of the semi-classical theory of Gross et al 6,7] with the result that the width asymmetry of the bands are attributed to a Maxwell-Boltzmann distribution of the excitons in an exciton band with an effective exciton temperature close to that of the lattice. |
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