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Surface structure of low-coveraged Cs on Si(0 0 1)-() system |
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| Authors: | J.Y. Park J.H. Seo J.Y. Kim C.N. Whang S.S. Kim D.S. Choi K.H. Chae |
| Affiliation: | aInstitute of Physics & Applied Physics, Yonsei University, Seoul 120-749, South Korea bDepartment of Physics, Mokwon University, Taejeon 301-729, South Korea cDepartment of Physics, Kangwon National University, Chuncheon 200-701, South Korea dDivision of Materials Science and Technology, Korea Institute of Science and Technology, Seoul 130-791, South Korea |
| Abstract: | Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83±0.05 Å from the second layer of Si(0 0 1) surface. |
| Keywords: | Surface structure Morphology, Roughness and topography Silicon Cesium Alkali metals Low energy ion scattering (LEIS) |
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