Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so--gel spin coating |
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| Authors: | Zhong Wen-Wu Liu Fa-Min Cai Lu-Gang Zhou Chuan-Cang Ding Peng and Zhang Huan |
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| Institution: | Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China;Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China;Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China;Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China;Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China;Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China |
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| Abstract: | ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol--gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×108, 3.26×108, 5.23×108, and 6.97×108 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm. |
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| Keywords: | ZnO thin films co-doped with Al and Sb sol--gel spin-coating method structure distortion optical and electrical properties |
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