偏压磁控溅射法在水冷柔性衬底上制备ITO透明导电膜

通过对衬底施加负偏压吸引等离子体中的阳离子对衬底轰击，从而用射频磁控溅射法在水冷透明绦纶聚脂胶片上制备出相对透过率为80%左右、最小电阻率为63×10^-4Ωcm、附着良好的ITO(Indium Tin Oxide)透明导电膜.SnO₂最佳掺杂浓度为7.5%—10%(w.t.),最佳氩分压为0.5—1Pa.当衬底负偏压为20—40V时，晶粒平均尺寸最大，制备出的薄膜的电阻率有最小值.薄膜为多晶纤锌矿结构，垂直于衬底的c轴具有［222］方向的择优取向，随衬底负偏压 关键词：

PREPARATION OF ITO FILMS ON WATER-COOLED FLEXIBLE SUBSTRATE BY BIAS R.F. MAGNETRON SPUTTERING

Good adherent indium-tin oxide (ITO) (10wt% SnO₂ impurity) films with a transmittance of about 80% in visible range and resistivity as low as 6.3×10^-4Ωcm,were deposited on water-cooled PPA (Polypropylene adipate) substrate by bias r.f. magnetron sputtering.The transmittance in wavelength range of 300—550nm of these films was found to increase with the negative bias applied to the substrate.All these films have a preferred orientation of 222].The X-ray diffraction peaks of 200] decrease with increasing negative bias of the substrate.This means the number of crystal grains growing along 400] decreases.The grain sizes,as well as the conductivities of the films have a maximum value indicated by both AFM microscopy and XRD pattern in the range of -20—-40V of the bias applied to the substrate.The proper working pressure of argon is about 0.5—1Pa,and the proper impurity density of SnO₂ is 7.5%—10%(w.t.).