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X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer |
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| Authors: | Folomeshkin M. S. Volkovsky Yu. A. Prosekov P. A. Galiev G. B. Klimov E. A. Klochkov A. N. Pushkarev S. S. Seregin A. Yu. Pisarevsky Yu. V. Blagov A. E. Kovalchuk M. V. |
| Affiliation: | 1.Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia ;2.National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia ;3.Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia ;4.St. Petersburg State University, 199034, St. Petersburg, Russia ; |
| Abstract: | Crystallography Reports - Epitaxial In0.53Ga0.47As films, grown on GaAs substrates with the (100) and (111)А crystallographic orientations in the standard high-temperature and low-temperature... |
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