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Annealing behavior of a void network in amorphous silicon |
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| Authors: | Iwao Ohdomari Masahiro Ikeda Hiroki Yoshimoto |
| Affiliation: | School of Science and Engineering, Waseda University, 4-170, Nishi-Ohkubo, Shinjuku-ku, Tokyo, Japan |
| Abstract: | A void network in a-Si films prepared by vacuum deposition was studied. A close relationship in annealing behavior has been observed between the changes in surface area of voids and in the ESR signal strength. |
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