Rapid thermal process-induced recombination centers in ion implanted silicon

This work presents direct evidence for a correlation between rapid thermal process-induced recombination centers and co-implanted metallic impurities in ion implanted silicon. Experimental evidence includes the dose dependence of the minority carrier diffusion length measured by the SPV technique, SIMS and RBS analysis of high-dose implantations which show the presence of heavy metals, the dependence of the final diffusion lengths on the mass of the implanted ions, as well as the successful modification of an implantation equipment.