Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors |
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| Authors: | A G Gudkov V G Tikhomirov B R Shub S I Vidyakin |
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| Institution: | 1.Bauman Moscow State Technical University,Moscow,Russia;2.St. Petersburg Electrotechnical University (LETI),St. Petersburg,Russia;3.Semenov Institute of Chemical Physics,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented. |
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