Facile growth of monolayer MoS2 film areas on SiO2 |
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| Authors: | John?Mann,Dezheng?Sun,Quan?Ma,Jen-Ru?Chen,Edwin?Preciado,Taisuke?Ohta,Bogdan?Diaconescu,Koichi?Yamaguchi,Tai?Tran,Michelle?Wurch,KatieMarie?Magnone,Tony F.?Heinz,Gary L.?Kellogg,Roland?Kawakami,Ludwig?Bartels mailto:bartels@ucr.edu" title=" bartels@ucr.edu" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author |
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| Affiliation: | 1.Chemistry, Physics, and Materials Science and Engineering, University of California,Riverside,USA;2.Departments of Physics and Electrical Engineering, Columbia University,New York,USA;3.Sandia National Laboratories,Albuquerque,USA |
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| Abstract: | ![]()
Areas of single-layer MoS2 film can be prepared in a tube furnace without the need for temperature control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport measurements show n-doped material with a mobility of 0.26 cm2 V-1 s-1. |
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