BBDMS-PPV/ITO界面结构ADXPS研究

聚合物电致发光器件（Polymer Electroluminescent Device,PLED)已显示出广阔的应用前景^1-6]。已往人们比较重视阴极材料的选择及相关金属与有机界面的研究^7]，而有关发光层或空穴传输层与阳极ITO膜之间的界面结构及化学问题则少见报道。事实上，ITO膜与有机层之间的作用对器件的可靠性及寿命具有更为严重的影响^8,9]。由于异质界面的过渡层结构复杂，以纳米尺度上化学组成是非计量比的，因此对这种极薄的埋藏界面的研究方法还需进一步探索。本文通过模型试样制备和变角X射线光电子谱（ADXPS）技术，对PLED中共轭导电聚合物聚2，5－二（二甲基正丁基硅基）对苯乙烯撑（BBDMS－PPV）与阳极ITO膜所形成的界面结构进行了初步研究。

Studies on Interface Structure of BBDMS-PPV/ITO System Using ADXPS Technique

We analyzed the structure of buried interface of BBDMS PPV/ITO system using a high resolution ADXPS technique. A transitional layer structure, whose chemical composition, state and valence band changed gradually from BBDMS PPV surface of film to substrate ITO, was observed. It was found that O 2- ion from ITO diffused into polymer film, interacted with back bone carbon and formed the carbonyl bonding which could possibly constructed the channel of the carrier on the heterointerface. Indium of ITO also diffused into BBDMS PPV layer and In(OH) 3 was formed during diffusion. The diffusion and reaction between PPV/ITO interface may affect the performance of PLED significantly.