Photoelectrochemical etching of ZnS: Further evidence for non-uniform flow of charge carriers in Schottky barriers

It is shown that short photoelectrochemical etching of two kinds of ZnS crystals leads to a reduction in the surface recombination velocity as evidenced by their increased photocurrent. The unique surface morphology (>10⁹ pits cm^–2) revealed after photoetching supports the hypothesis that the charge flow within the space charge layer is highly nonuniform.Incumbent of Helen & Milton A. Kimmelman Career Development Chair in perpetuity established by Helen and Milton A. Kimmelman, New York, NY