Electronic transport for armchair graphene nanoribbons with a potential barrier

We theoretically investigate the electronic transport properties through a rectangular potential barrier embedded in armchair-edge graphene nanoribbons (AGNRs) of various widths. Using the Landauer formula and Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and outside the barrier, we calculate analytically the conductance and Fano factor for the both metallic and semiconducting AGNRs, respectively. It is shown that, by some numerical examples, at Dirac point the both types of AGNRs own a minimum conductance associated with the maximum Fano factor. The results are discussed and compared with the previous relevant works.