Impact of interface relaxation on the nanoscale corrugation in Pb/Si(1 1 1) islands |
| |
Authors: | TL Chan WC Lu KM Ho |
| |
Institution: | Ames Laboratory-US DOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA |
| |
Abstract: | The nanoscale hexagonal pattern observed in scanning tunneling microscopy (STM) for 3-layer and 4-layer Pb islands on Si(1 1 1) is studied theoretically. We found that besides thickness the atomic rearrangement at the Pb/Si interface plays an important role in determining the STM patterns. Electronic structures of the Pb film on Si(1 1 1) obtained from fully relaxed and unrelaxed Pb films are qualitatively different. Simulated STM images for Pb films with different stacking also show that the corrugation patterns are sensitive to the buried Pb-Si interfacial structure. |
| |
Keywords: | Metal-semiconductor interfaces Molecular dynamics Scanning tunneling microscopy Surface relaxation and reconstruction Self-assembly Silicon Lead Low index single crystal surfaces |
本文献已被 ScienceDirect 等数据库收录! |