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Deexcitation of sputtered metastable aluminum atoms
Authors:Ming Tan  Bruce V King
Institution:a College of Physical Science and Technology, Central China Normal University, Wuhan 430079, China
b School of Mathematics and Physical Sciences, University of Newcastle, Callaghan, NSW 2308, Australia
Abstract:An experimental system was set up incorporating pulsed ion beam sputtering, two Nd:YAG pumped dye lasers and an imaging time-of-flight (TOF) analysis system. The system was used to perform state-selective analyses of neutral atoms sputtered from surfaces using resonant one-color and two-color ionization schemes. We have measured, for the first time, TOF mass spectra of Al atoms sputtered into the ground state View the MathML source and first excited state View the MathML source (with an excitation energy of 0.014 eV) from single crystals of Ni3Al and NiAl. The population ratio of the first excited state to the ground state in the sputtered flux was estimated to be 0.91 for Ni3Al and 0.95 for NiAl, respectively. This indicates that the magnitude of the excitation energy plays an important role even in the deexcitation rate of sputtered metastable state atoms with an open outer shell.
Keywords:REMPI/MS  Ion-solid interaction  Sputtering  Alloy  Single crystal surface
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