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Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment |
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| Authors: | Kenta Arima Akihisa Kubota Kouji Inagaki Yuzo Mori |
| Institution: | a Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan b Department of Mechanical Engineering and Materials Science, Kumamoto University, 2-39-1, Kurokami, Kumamoto City, Kumamoto 860-8555, Japan c Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan |
| Abstract: | A surface preparation method with fine SiO2 particles in water is developed to flatten Si(0 0 1) surfaces on the nanometer scale. The flattening performance of Si(0 0 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100 × 100 nm2) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the 〈1 1 0〉 direction on terraces. |
| Keywords: | Scanning tunneling microscopy Surface structure morphology roughness and topography Silicon Water Low index single crystal surfaces Solid-liquid interfaces |
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