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Growth of In nanocrystallite arrays on the Si(1 0 0)-c(4 × 12)-Al surface |
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| Authors: | DV Gruznev DA Olyanich AA Saranin AV Zotov |
| Institution: | a Institute of Automation and Control Processes, 5 Radio str., 690041 Vladivostok, Russian Federation b Faculty of Physics and Engineering, Far Eastern State University, 8 Sukhanova str., 690000 Vladivostok, Russian Federation c Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russian Federation |
| Abstract: | Using scanning tunneling microscopy, growth of In nanoisland arrays on the Si(1 0 0)-c(4 × 12)-Al surface has been studied for In coverage up to 1.1 ML and substrate temperature from room temperature to 150 °C. In comparison to the case of In deposition onto the clean Si(1 0 0) surface or Si(1 0 0)4 × 3-In reconstruction, the In growth mode is changed by the c(4 × 12)-Al reconstruction from the 2D growth to 3D growth, thus displaying a vivid example of the Volmer-Weber growth mode. Possible crystal structure of the grown In nanoislands is discussed. |
| Keywords: | Nanoisland Si(1 0 0)-c(4 × 12)-Al Indium Scanning tunneling microscopy |
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