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Initial stages of MnAs/GaAs(0 0 1) epitaxy studied by RHEED azimuthal scans
Authors:Wolfgang Braun  Dillip K. Satapathy  Klaus H. Ploog
Affiliation:Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Abstract:
We study the nucleation phase of molecular beam epitaxy of (hexagonal) MnAs on (cubic) GaAs (0 0 1) using reflection high-energy electron diffraction (RHEED) azimuthal scans. The nucleation proceeds from a non-reconstructed initial stage through randomly oriented small nuclei and two orientation stages to the final single-phase epitaxial orientation. The fascinatingly complex nucleation process contains elements of both Volmer-Weber and Stranski-Krastanov growth. The measurement demonstrates the potential of high-resolution RHEED techniques to assess details of the surface structure during epitaxy.
Keywords:Reflection high-energy electron diffraction (RHEED)   Molecular beam epitaxy (MBE)   Nucleation   Surface structure   Heteroepitaxy
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