Initial stages of MnAs/GaAs(0 0 1) epitaxy studied by RHEED azimuthal scans |
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Authors: | Wolfgang Braun Dillip K. Satapathy Klaus H. Ploog |
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Affiliation: | Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany |
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Abstract: | We study the nucleation phase of molecular beam epitaxy of (hexagonal) MnAs on (cubic) GaAs (0 0 1) using reflection high-energy electron diffraction (RHEED) azimuthal scans. The nucleation proceeds from a non-reconstructed initial stage through randomly oriented small nuclei and two orientation stages to the final single-phase epitaxial orientation. The fascinatingly complex nucleation process contains elements of both Volmer-Weber and Stranski-Krastanov growth. The measurement demonstrates the potential of high-resolution RHEED techniques to assess details of the surface structure during epitaxy. |
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Keywords: | Reflection high-energy electron diffraction (RHEED) Molecular beam epitaxy (MBE) Nucleation Surface structure Heteroepitaxy |
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