|
|||||
|
|
Zone specificity in low energy electron stimulated desorption of Cl from reconstructed Si(1 1 1)-7 × 7:Cl surfaces |
|
| Authors: | Doogie Oh Thomas M Orlando |
| Institution: | a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332, United States b Intel Corporation, Hillsboro, OR 97006, United States c School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, United States |
| Abstract: | Diffraction in electron stimulated desorption has revealed a propensity for Cl+ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions. |
| Keywords: | Electron-solid interactions Electron-solid diffraction Electron stimulated desorption Silicon Chlorine |
| 本文献已被 ScienceDirect 等数据库收录！ | |