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Chemically prepared well-ordered InP(0 0 1) surfaces |
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| Authors: | O.E. Tereshchenko D. Paget E. Placidi F. Wiame |
| Affiliation: | a Institute of Semiconductor Physics, Novosibirsk State University, Lavrentiev Avenue 13, 630090 Novosibirsk, Russian Federation b Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau cedex, France c Dipartimento di Fisica and CNISM, Università di Roma Tor Vergata, 00133 Roma, Italy d CNR - Istituto Nazionale di Fisica della Materia Via della Ricerca Scientifica 1, 00133 Roma, Italy e LURE, Université Paris-Sud, 91405 Orsay, France f Laboratoire de Physico-Chimie des Surfaces, Ecole Nationale Supérieure de Chimie de Paris, 75231 Paris cedex 05, France |
| Abstract: | In the present work HCl-isopropanol treated and vacuum annealed InP(0 0 1) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 °C induces desorption of InClx overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 × 4) surface. The structural properties of chemically prepared InP(0 0 1) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. |
| Keywords: | InP HCl-isopropanol treatment Passivation Low energy electron diffraction Soft X-ray photoemission Reflectance anisotropy spectroscopy |
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