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Initial stage of nitridation on Si(1 0 0) surface using low-energy nitrogen ion implantation |
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| Authors: | Ki-jeong Kim Tai-Hee Kang Chulho Jeon Bongsoo Kim |
| Institution: | a Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, POSTECH, san 31 Hyojadong, Pohang, Kyungbuk 790-784, South Korea b Department of Physics, Sung Kyun Kwan University, Suwon, Kyungi, 440-746, South Korea c Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, South Korea d Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea |
| Abstract: | The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si1+, Si2+, and Si3+). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si1+, Si2+ and Si3+ are the interface states. |
| Keywords: | Silicon nitride Synchrotron radiation photoemission spectroscopy Ion implantation |
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