The high deposition of microcrystalline silicon thin film by very high frequency plasma enhancedchemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($mu$c-Si:H) films are prepared with plasma enhanced chemical vapourdeposition from silane/hydrogen mixtures at 200du with the aim toincrease the deposition rate. An increase of the deposition rate to0.88,nm/s is obtained by using a plasma excitation frequency of75,MHz. This increase is obtained by the combination of a higherdeposition pressure, an increased silane concentration, and higherdischarge powers. In addition, the transient behaviour, which candecrease the film crystallinity, could be prevented by filling thebackground gas with Hchemical vapour deposition,plasma deposition, solar cells, crystallinityProgram supported by the State KeyDevelopment Program for Basic Research of China (Grant No2006CB202601), and Basic Research Project of Henan Province in China(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($mu$c-Si:H) films are prepared with plasma enhanced chemical vapourdeposition from silane/hydrogen mixtures at 200du with the aim toincrease the deposition rate. An increase of the deposition rate to0.88,nm/s is obtained by using a plasma excitation frequency of75,MHz. This increase is obtained by the combination of a higherdeposition pressure, an increased silane concentration, and higherdischarge powers. In addition, the transient behaviour, which candecrease the film crystallinity, could be prevented by filling thebackground gas with Hchemical vapour deposition,plasma deposition, solar cells, crystallinityProgram supported by the State KeyDevelopment Program for Basic Research of China (Grant No2006CB202601), and Basic Research Project of Henan Province in China(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($mu$c-Si:H) films are prepared with plasma enhanced chemical vapourdeposition from silane/hydrogen mixtures at 200du with the aim toincrease the deposition rate. An increase of the deposition rate to0.88,nm/s is obtained by using a plasma excitation frequency of75,MHz. This increase is obtained by the combination of a higherdeposition pressure, an increased silane concentration, and higherdischarge powers. In addition, the transient behaviour, which candecrease the film crystallinity, could be prevented by filling thebackground gas with Hchemical vapour deposition,plasma deposition, solar cells, crystallinityProgram supported by the State KeyDevelopment Program for Basic Research of China (Grant No2006CB202601), and Basic Research Project of Henan Province in China(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($mu$c-Si:H) films are prepared with plasma enhanced chemical vapourdeposition from silane/hydrogen mixtures at 200du with the aim toincrease the deposition rate. An increase of the deposition rate to0.88,nm/s is obtained by using a plasma excitation frequency of75,MHz. This increase is obtained by the combination of a higherdeposition pressure, an increased silane concentration, and higherdischarge powers. In addition, the transient behaviour, which candecrease the film crystallinity, could be prevented by filling thebackground gas with Hchemical vapour deposition,plasma deposition, solar cells, crystallinityProgram supported by the State KeyDevelopment Program for Basic Research of China (Grant No2006CB202601), and Basic Research Project of Henan Province in China(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($mu$c-Si:H) films are prepared with plasma enhanced chemical vapourdeposition from silane/hydrogen mixtures at 200du with the aim toincrease the deposition rate. An increase of the deposition rate to0.88,nm/s is obtained by using a plasma excitation frequency of75,MHz. This increase is obtained by the combination of a higherdeposition pressure, an increased silane concentration, and higherdischarge powers. In addition, the transient behaviour, which candecrease the film crystallinity, could be prevented by filling thebackground gas with H$_{2}$ prior to plasma ignition, and selectingproper discharging time after silane flow injection. Materialprepared under these conditions at a deposition rate of 0.78,nm/smaintains higher crystallinity and fine electronic properties. ByH-plasma treatment before i-layer deposition, single junction $mu$c-Si:H solar cells with 5.5{%} efficiency are fabricated.