|
|||||
|
|
| 氢化非晶锗碳薄膜中的自旋缺陷态 | |
| 引用本文： | 陈光华,于工,张仿清,吴天喜. 氢化非晶锗碳薄膜中的自旋缺陷态[J]. 物理学报, 1992, 41(10): 1700-1705 |
| 作者姓名： | 陈光华 于工 张仿清 吴天喜 |
| 作者单位： | 兰州大学物理系,兰州730001 |
| 摘 要： | 本文应用原位电子自旋共振(ESR)技术研究了射频反应溅射法制备的氢化非晶锗碳(a-Ge1-xCx:H)薄膜中自旋缺陷态的种类、密度、温度依赖关系和热力学动态行为。在分解ESR谱的过程中,发现了它的不对称成分,并对此进行了定量分析和微观机理的探讨。关键词： |
| 关 键 词： | 氢化 薄膜 无定形半导体 缺陷 错 |
| 收稿时间： | 1991-10-17 |
SPIN DEFECT STATES IN HYDROGENATED AMORPHOUS GERMANIUM-CARBON FILMS |
|
| CHEN GUANG-HUA,YU GONG,ZHANG FANG-QING and WU TIAN-XI. SPIN DEFECT STATES IN HYDROGENATED AMORPHOUS GERMANIUM-CARBON FILMS[J]. Acta Physica Sinica, 1992, 41(10): 1700-1705 | |
| Authors: | CHEN GUANG-HUA YU GONG ZHANG FANG-QING WU TIAN-XI |
| Abstract: | Using in situ electron spin resonance(ESR) technique, we have studied the type, the density, the temperature dependence and the thermal dynamic behavior of defects in rf-reactively sputtered a-Ge1-xCx: H films. In the decomposition process of the ESR spectra, we found that the spectra have an asymmetrical component. Quantitative analysis of the component and the explanation of its origin are given. |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ | |
| 点击此处可从《物理学报》浏览原始摘要信息 | |
| 点击此处可从《物理学报》下载免费的PDF全文 | |