|
|||||
|
|
| Si1-xGex合金的红外透射光谱 | |
| 引用本文： | 石晓红 刘普霖. Si1-xGex合金的红外透射光谱[J]. 光子学报, 1996, 25(4): 315-317 |
| 作者姓名： | 石晓红 刘普霖 |
| 作者单位： | 中国科学院上海技术物理研究所红外物理国家实验室 上海 200083 |
| 摘 要： | 本文报道了4.2～300K温度范围的富含Si的Si1-xGex合金的晶格振动红外透射光谱.实验首次观察到Ge杂质诱发的一个新的共振模吸收.结果还表明,直拉法生长的Si1-xGex合金存在严重的氧沾污,且氧的振动峰随温度的降低向高频方向移动. |
| 关 键 词： | Si1-xGex 合金 红外透射光谱 共振模 |
| 收稿时间： | 1995-01-23 |
INFRARED TRANSMITTANCE SPECTRA OF Si1-xGex ALLOYS |
|
| Shi Xiaohong,Liu Pulin,Shi Guoliang,Shen Xuechu. INFRARED TRANSMITTANCE SPECTRA OF Si1-xGex ALLOYS[J]. Acta Photonica Sinica, 1996, 25(4): 315-317 | |
| Authors: | Shi Xiaohong Liu Pulin Shi Guoliang Shen Xuechu |
| Affiliation: | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
| Abstract: | In this paper,the infrared transmittance spectra of Si1-xGexalloys from 4.2K to 300K are presented.A new resonance absorption caused by Ge impurities was observed.The results also show that there are a lot of oxygen in Si1-xGex alloys grown by Gzochralshi. |
| Keywords: | Si1-xGex Infrared transmittance spectrum Resonance mode |
| 本文献已被 维普 等数据库收录！ | |
| 点击此处可从《光子学报》浏览原始摘要信息 | |
| 点击此处可从《光子学报》下载全文 | |