| 无铬相移掩模光刻技术 |
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| 引用本文： | 冯伯儒,陈宝钦.无铬相移掩模光刻技术[J].光子学报,1996,25(4):328-332. |
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| 作者姓名： | 冯伯儒 陈宝钦 |
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| 作者单位： | 1. 中国科学院光电技术研究所 开放室 成都 610209;2. 中国科学院微电子中心 北京 100029 |
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| 摘 要： | 本文论述了相移掩模(PSM)提高光刻分辨率的基本原理、主要类型、无铬PSM的制作方法,简述了曝光实验和实验结果.用NA=0.28的g线光刻机得到了0.5μm的实际分辨率.
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| 关 键 词： | 相移掩膜 无铬相移掩膜 光刻技术 |
| 收稿时间： | 1995-01-17 |
CHROMELESS PHASE SHIFT MASK PHOTOLITHOGRAPHY |
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| Feng Boru,Chen Baoqin.CHROMELESS PHASE SHIFT MASK PHOTOLITHOGRAPHY[J].Acta Photonica Sinica,1996,25(4):328-332. |
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| Authors: | Feng Boru Chen Baoqin |
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| Institution: | 1. Institute of Optics & Electronics, Chinese Academy of Sciences, Chengdu, SC 610209;2. Microelectronics R D Centre, Chinese Academy of Sciences, Beijing 100029 |
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| Abstract: | In the paper,we describe the basic principles and primary types of phase shift masks (PSM) used for increasing resolution.Manufacturing methods of chromeless PSM are presented. Exposure experiment and experimental results are given.Practical resolution 0.5 m has been gained with g line(436nm)10x reduction stepper of NA 0.28. |
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| Keywords: | Phase-shifting mask Chromeless phase-shifting mask Photolithography |
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