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Layer arrangement in the structure of octakis-(trimethylsiloxy)octasilsesquioxane and dodecakis-(trimethylsiloxy)cyclohexasiloxane
Authors:S. A. Gromilov  T. V. Basova  D. Yu. Emel’yanov  A. V. Kuzmin  S. A. Prokhorova
Affiliation:(1) A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk;(2) Novosibirsk State University, Russia
Abstract:Layers of [(CH3)3SiO]8(SiO1.5)8 and [(CH3)3SiO]12(SiO)6 organosilicon compounds obtained by chemical vapor deposition were investigated by X-ray diffraction (DRON-RM4, R = 192 mm, CuKagr radiation) and Raman spectroscopy (Triplemate, SPEX). The layers were found to be ideally oriented polycrystalline films. The octakis-(trimethylsiloxy)octasilsesquioxane polycrystals are oriented in one crystallographic direction — [001], while the dodecakis-(trimethylsiloxy)cyclohexa-siloxane polycrystals are oriented in the 
$$left[ {bar 120} right]$$
and 
$$left[ {bar 111} right]$$
directions. Crystal structure analysis in these directions yielded the type of the planar lattice followed by the molecules and their orientation relative to the support.Original Russian Text Copyright © 2004 by S. A. Gromilov, T. V. Basova, D. Yu. Emelrsquoyanov, A. V. Kuzmin, and S. A. ProkhorovaTranslated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 3, pp. 497–501, May–June 2004.
Keywords:organosilicon compounds  X-ray diffraction study  Raman spectroscopy  oriented layers
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