Layer arrangement in the structure of octakis-(trimethylsiloxy)octasilsesquioxane and dodecakis-(trimethylsiloxy)cyclohexasiloxane |
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| Authors: | S A Gromilov T V Basova D Yu Emel’yanov A V Kuzmin S A Prokhorova |
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| Institution: | (1) A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk;(2) Novosibirsk State University, Russia |
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| Abstract: | Layers of (CH3)3SiO]8(SiO1.5)8 and (CH3)3SiO]12(SiO)6 organosilicon compounds obtained by chemical vapor deposition were investigated by X-ray diffraction (DRON-RM4, R = 192 mm, CuK
 radiation) and Raman spectroscopy (Triplemate, SPEX). The layers were found to be ideally oriented polycrystalline films. The octakis-(trimethylsiloxy)octasilsesquioxane polycrystals are oriented in one crystallographic direction — 001], while the dodecakis-(trimethylsiloxy)cyclohexa-siloxane polycrystals are oriented in the
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and
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directions. Crystal structure analysis in these directions yielded the type of the planar lattice followed by the molecules and their orientation relative to the support.Original Russian Text Copyright © 2004 by S. A. Gromilov, T. V. Basova, D. Yu. Emel yanov, A. V. Kuzmin, and S. A. ProkhorovaTranslated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 3, pp. 497–501, May–June 2004. |
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| Keywords: | organosilicon compounds X-ray diffraction study Raman spectroscopy oriented layers |
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