首页 | 本学科首页   官方微博 | 高级检索  
     

Oxide magnetic semiconductors: Materials, properties, and devices
作者姓名:田玉峰  胡树军  颜世申  梅良模
基金项目:Project supported by the National Natural Science Foundation of China (Grant Nos. 5125004 and 10974120), 111 Project (Grant No. B 13029), and the National Basic Research Program of China (Grant Nos. 2013CB922303 and 2009CB929202).
摘    要:We give a brief introduction to the oxide (ZnO, TiO2, In2O3, SnO2, etc.)-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.

关 键 词:磁性半导体材料  掺杂氧化物  光学性能  设备  二氧化钛  基础材料  应用程序  过渡金属
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号