Electronic states and shapes of silicon quantum dots |
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Affiliation: | Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China |
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Abstract: | ![]() A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap.The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces,for example,a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet.The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect.Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect. |
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Keywords: | Si quantum dots curved surface effect surface bonds localized levels |
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