| Topological edge states and electronic structures of a 2D topological insulator： Single-bilayer Bi （111） |
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| 引用本文： | 高春雷,钱冬,刘灿华,贾金锋,刘锋.Topological edge states and electronic structures of a 2D topological insulator： Single-bilayer Bi （111）[J].中国物理 B,2013(6):72-80. |
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| 作者姓名： | 高春雷 钱冬 刘灿华 贾金锋 刘锋 |
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| 作者单位： | [1]Key Laboratory of Artificial Structures and Quantum Control （Ministry of Education）, Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China [2]Department of Materials Science ＆ Engineering, University of Utah, Salt Lake City, Utah 84112, USA |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grants Nos. 2012CB927401, 2011CB921902, 2013CB921902, and 2011CB922200）, the National Natural Science Foundation of China （Grants Nos. 91021002, 11174199, 11134008, and 11274228） and SCSTC （Grant Nos. 1 IJC1405000, 11PJ 1405200, and 12JC 1405300）. |
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| 摘 要： | Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi （111） bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi （111） ultrathin bilayers on topological insulator Bi2Te3 or Bi2Se3 substrates. In this review, we started from the growth mode of Bi （111） bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy （STM/STS）, angle-resolved photoemission spectroscopy （ARPES）, and first principles calculations.
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| 关 键 词： | topological insulators edge states electronic structures Bi bilayer |
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