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Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
Authors:Ren Sheng-Dong  Li Bin-Cheng  Gao Li-Feng  and Wang Qian
Affiliation:[1]Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China [2]University of the Chinese Academy of Sciences, Beijing 100049, China
Abstract:
Keywords:photocarrier radiometry   ion implantation   effective lifetime   silicon
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