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Optical reflectivity study of silicon ion implanted poly(methyl methacrylate) |
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| Authors: | Georgi B. Hadjichristov Ivan L. Stefanov Gergana D. Blaskova Eric Faulques |
| Affiliation: | a Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria b Department of Quantum Electronics, Faculty of Physics, Sofia University, 5 James Bourchier Blvd., BG-1164 Sofia, Bulgaria c Bulgarian Institute of Metrology - National Centre of Metrology, 2 Prof. P. Mutafchiev Str., BG-1797 Sofia, Bulgaria d Sofia University, Faculty of Physics, 5 James Bourchier Blvd., BG-1164 Sofia, Bulgaria e Institut des Matériaux Jean Rouxel, UMR6502 CNRS, Nantes Atlantic Universities, 2 rue de la Houssiniere - BP 32229, 44322 Nantes, France |
| Abstract: | The optical reflectivity (both specular and off-specular) of poly(methyl methacrylate) (PMMA) implanted with silicon ions (Si+) at energy of 50 keV, is studied in the spectral range 0.25-25 μm. The effect from the Si+ implantation on the reflectivity of two PMMA materials is examined in the dose range from 1014 to 1017 ions/cm2 and is linked to the structure formed in this ion implanted plastic. As compared to the pristine PMMA, an enhancement of the reflectivity of Si+ implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation. The ion-produced subsurface organic interface is also probed by laser-induced thermo-lens. |
| Keywords: | 42.70.Jk 61.82.Pv 78.40.Me 78.68. +m |
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