The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition |
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| Authors: | Xuerui Cheng Guobin Zhang Tingting Li Min Yin |
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| Institution: | a Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, China |
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| Abstract: | The La2Hf2O7 films have been deposited on Si (1 0 0) substrate by using pulsed laser deposition (PLD) method. X-ray diffraction (XRD) demonstrates that the as-grown film is amorphous and crystallizes after 1000 °C annealing. The interface structure is systematically studied by Synchrotron X-ray reflectivity (XRR), Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). Silicide, silicate and SiOx formations from interfacial reaction are observed on the surface of the Si substrate in the as-grown film. The impact of silicide formation on the electrical properties is revealed by capacitance-voltage (C-V) measurements. By post-deposition annealing (PDA), silicide can be effectively eliminated and C-V property is obviously improved. |
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| Keywords: | Thin films Laser deposition Interface |
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