Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates |
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Authors: | Hiroyuki Sasaki Akinori Tanaka Tazumi Nagasawa Shoji Suzuki Toshiro Nagase |
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Affiliation: | a Department of Physics, Graduate School of Science, Tohoku University, Aoba-ku, Sendai 980-8578, Japan b The Tohoku University Museum, Tohoku University, Aoba-ku, Sendai 980-8578, Japan |
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Abstract: | We have carried out an angle-resolved photoemission study for CoSi2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates. |
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Keywords: | 73.20.Dx 79.60.i 68.55.a 81.15.Hi |
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