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High pressure X-ray diffraction and electrical resistance study of the quasi-one-dimensional sulfide InV6S8 |
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| Authors: | Alka B Garg BK Godwal BR Martin |
| Institution: | a High Pressure Physics Division, Purnima Labs, Bhabha Atomic Research Center, Mumbai 400 085, India b Laboratory for Solid State Chemistry, Okayama University of Science, Ridai-cho 1-1, Okayama 70-0005, Japan c Department of Chemistry and Biochemistry, Texas State University, 601 University Drive, San Marcos, TX 78666, USA d Department of Physics, Colorado State University, Fort Collins, CO 80523, USA |
| Abstract: | The ambient structural details and the results of room temperature high pressure angle dispersive X-ray diffraction and electrical resistance measurements on the quasi-one-dimensional sulfide, InV6S8, to a pressure of 25 GPa are reported. The material does not undergo a phase transition in this pressure range, though an anomaly in the c/a ratio has been observed around 10 Gpa. A fit of the Murnaghan equation of state to the V/V0 versus pressure data, with the value of the derivative of B0 with respect to pressure, B′0, fixed at 4 has yielded a value of the bulk modulus, B0, of 110 GPa. We also present data of the pressure dependence of the lattice constants, a and c, the ratio c/a, and the resistance at room temperature. |
| Keywords: | 61 10 &minus I 64 30 +t |
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