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Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well |
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| Authors: | A. Sasaki K. Nishizuka S. Sakai Y. Kawakami |
| Affiliation: | a Department of Electronics, Osaka Electro-Communication University, Neyagawa 572-8530, Japan b Nitride Semiconductors Co. Ltd., Tokushima 770-8506, Japan c Department of Electrical and Electronic Engineering and Satellite Venture Business Laboratory, The University of Tokushima, Tokushima 770-8506, Japan d Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan |
| Abstract: | Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of PL exhibits an S-shaped shift with increasing temperature. The radiative recombination time τRAD begins to increase at the temperature for the position to change from the red-shift to the blue-shift. The steep increase of τRAD is observed beyond the temperature from the blue-shift to the red-shift. For the SQWs with the well widths of 4 and 5 nm, the peak position of PL exhibits a monotonic red-shift. τRAD decreases at first and then increases with temperature. It is about 100-times longer in the low temperature region and about 10-times longer at room temperature as compared with those of the SQWs with narrower widths. |
| Keywords: | 78.47.+p 78.55.&minus m 78.66Fd 78.66.&minus w |
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