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Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing |
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| Authors: | M.-H. Cho H.S. Chang D.W. Moon R. Sinclair D.-H. Ko J.H. Gu |
| Affiliation: | a Korea Research Institute of Standards and Science, 1 Dorygong-Dong, Yuseong-gu, Daejon 305-600, South Korea b Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA c Department of Ceramics Engineering, Yonsei University, Seoul 120-749, South Korea d Process Development Team, Samsung Electronics Co., Ltd., San #24, Yongin-Si, Kyunggi-Do 449-711, South Korea |
| Abstract: | Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface. |
| Keywords: | Semiconductor-insulator interfaces Photoelectron spectroscopy |
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