Patterned aluminum nanowires produced by electron beam at the surfaces of AlF3 single crystals |
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Authors: | C. Ma |
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Affiliation: | School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Dr, Atlanta, GA 30332-0245, USA |
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Abstract: | Cubic- and rectangular-shape single crystals of α-AlF3 in sizes of 5-50 μm have been synthesized by a solid-vapor phase process. Using the electron beam induced decomposition of AlF3, a method is demonstrated for fabricating patterned aluminum nanowires in AlF3 substrate in a scanning electron microscope. By controlling the accelerating voltage, the beam current and scanning time, it is possible to fabricate metallic nanowires of different sizes. The aluminum nanowires may act as nano-interconnects for nanoelectronics. This work demonstrates a potential technique for e-beam nanofabrication. |
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Keywords: | 61.46.+w 81.07.&minus b |
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