“Rotating” steps in Si(0 0 1) homoepitaxy |
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Authors: | SN Filimonov B Voigtländer |
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Institution: | a Siberian Physical-Technical Institute, Tomsk State University, 634050 Tomsk, Russia b Institut für Schichten und Grenzflächen ISG 3, Forschungszentrum Jülich, D-52425 Jülich, Germany |
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Abstract: | Steps on Si(0 0 1) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to “rotate” toward 1 1 0] directions during Si growth. This step “rotation” occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. |
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Keywords: | Computer simulations Models of surface kinetics Molecular beam epitaxy Scanning tunneling microscopy Faceting |
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