Arresting photodegradation of porous silicon by a polymer coating |
| |
Authors: | NP Mandal SC Agarwal |
| |
Institution: | a Department of Physics, Indian Institute of Technology, Kanpur 208016, India b Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016, India |
| |
Abstract: | Light soaking in air rapidly decreases photoluminescence (PL) of porous silicon (PS) and increases electron spin resonance (ESR) signal. In vacuum, a short light exposure (<2700 s) increases PL and decreases ESR, but longer exposures again degrade the PL. We could arrest the light-induced degradation over long periods by applying a thin polymer coating, which resulted in constant PL and ESR intensities. The PL intensity of coated PS is comparable to the PL intensity of a fresh PS sample in air. FTIR spectrum suggests new bond formations at the PS/polymer interface that may be responsible for PL stability. |
| |
Keywords: | 61 46 +w 61 82 Rx 78 55 &minus m |
本文献已被 ScienceDirect 等数据库收录! |
|