Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films |
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Authors: | Y.L Du G Chen |
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Affiliation: | a Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China b National Laboratory of Solid State Microstructures and Center for Materials Analysis, Nanjing University, Nanjing 210093, China |
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Abstract: | Polycrystalline Bi4Ti3O12 thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473-573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm−1 and appearance of a new Raman band at 151 cm−1. The two broad Raman bands centered at the 57 and 93 cm−1 at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi4Ti3O12 thin films. |
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Keywords: | 78.30.Hv 64.70.Kb 68.55.Jk |
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